feb.1999 mitsubishi semiconductor thyristor ? CR20F medium power use non-insulated type, glass passivation type CR20F symbol v rrm v rsm v r (dc) v drm v dsm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage dc off-state voltage voltage class unit v v v v v v 8 400 480 320 400 480 320 12 600 720 480 600 720 480 16 800 960 640 800 980 640 20 1000 1200 800 1000 1000 800 24 1200 1350 960 1200 1200 960 ?i t (av) ......................................................................... 20a ?v drm ............................. 400v/600v/800v/1000v/1200v ?i gt ..........................................................................50ma symbol i t (rms) i t (av) i tsm i 2 t di/dt p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge on-state current i 2 t for fusing critical rate of rise of on-state current peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature mounting torque weight conditions commercial frequency, sine half wave, 180 conduction, t c =86 c 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current v d =1/2v drm , i tm =60a, i g =0.1a. t j =25 c, f=60hz typical value unit a a a a 2 s a/ m s w w v v a c c kgcm nm g ratings 31.5 20 300 380 100 5.0 0.5 10 5 2 C30 ~ +125 C30 ~ +125 30 2.94 20 maximum ratings application dc motor control, electric furnace control, static switches, dc supply lock washer nut 2 3 (22) 8 19 f 3.5 1.6 1 f 1.5 3 f 14 3.5 type name 2 3 2.1 11 14 36 25.5 4.4 m6 1 note: mica washer and spacer are provided only upon request. solderless terminal telegraph wire 2.63~6.64mm 2 ? ? ? outline drawing dimensions in mm 1 2 3 1
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3 cathode anode gate
feb.1999 mitsubishi semiconductor thyristor ? CR20F medium power use non-insulated type, glass passivation type electrical characteristics test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t c =25 c, i tm =60a, instantaneous value t j =125 c, v d =2/3v drm t j =25 c, v d =6v, i t =0.5a t j =125 c, v d =1/2v drm t j =25 c, v d =6v, i t =0.5a t c =25 c, v d =100v, i t =15a, i g =0.1a junction to case case to fin unit ma ma v v v v ma m s c/w c/w typ. symbol i rrm i drm v tm dv/dt v gt v gd i gt t gt r th (j-c) r th (c-f) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage critical-rate of rise of off-state voltage gate trigger voltage gate non-trigger voltage gate trigger current turn-on time thermal resistance contact thermal resistance limits min. 50 0.25 max. 4.0 4.0 1.8 3.0 50 10 1.0 0.4 0 0.5 1.0 2.5 3.0 3.5 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 1.5 2.0 125? t c = 25? 320 240 200 120 40 80 160 280 10 0 23 5710 1 23 5710 2 44 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) performance curves
feb.1999 mitsubishi semiconductor thyristor ? CR20F medium power use non-insulated type, glass passivation type 10 ? 23 10 1 5710 2 23 5710 3 23 5710 4 10 1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 v gt = 3v p gm = 5w v gd = 0.25v v fgm = 10v i fgm = 2a p g(av) = 0.5w i gt t j = 125? 25? 30? 40 30 15 10 5 35 25 20 0 32 0 16 4 8 12 20 24 28 q = 30 60 120 q q 360 90 180 resistive loads 0 4 32 16 812 202428 20 15 10 5 25 30 35 40 45 50 0 q = 30 60 120 90 180 q 360 resistive, inductive loads maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (single-phase half wave) case temperature (?) average on-state current (a) gate characteristics gate voltage (v) gate current (ma) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) 130 110 80 70 60 120 100 90 50 0 32 16 4 8 12 20 24 28 q 360 resistive, inductive loads q = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 0 32 16 4 8 12 20 24 28 q 360 resistive, inductive loads natural convection aluminum plate painted black and greased bx40-06 fin 120 120 t3 q = 180 q = 90 allowable case temperature vs. average on-state current (single-phase full wave) case temperature (?) average on-state current (a) 130 110 80 70 60 120 100 90 50 32 0 16 4 8 12 20 24 28 q q 360 resistive loads q = 30 60 120 90 180
feb.1999 20 m6 1 2 -f 6.5 name plate (38.5) 30 16 19.5 f 9.5 3 name plate 125 115 99 50 60 120 40 CR20F block fin bx40-06 outline drawing (unit: mm) mitsubishi semiconductor thyristor ? CR20F medium power use non-insulated type, glass passivation type 0 5 40 20 10 15 25 30 35 20 15 10 5 25 30 35 40 45 50 0 q = 30 60 120 90 180 dc 270 q 360 resistive, inductive loads 130 110 80 70 60 120 100 90 50 0 20 5 1015 253035 q 360 40 q = 30 60 90 180 120 270 dc resistive, inductive loads 160 120 60 40 20 140 100 80 0 32 0 16 4 8 12 20 24 28 90 q = 180 q q 360 resistive loads natural convection bx40-06 fin 120 120 t3 aluminum plate painted black and greased allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (?) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (rectangular wave) ambient temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (rectangular wave) case temperature (?) average on-state current (a) 160 120 60 40 20 140 100 80 0 40 0 20 5 1015 253035 180 q = 90 dc bx40-06 fin 120 120 t3 aluminum plate painted black and greased q 360 resistive, inductive loads natural convection
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